Implementation and Applications of the Hydrodynamic Model in a General Purpose Device Simulator

نویسندگان

  • V. Axelrad
  • G. Rollins
  • S. Motzny
  • M. Jaczynski
چکیده

Local carrier heating and nonstationary effects in deep-submicron silicon devices can lead to substantial deviation between simulation results of classical device simulators and experimental data. A significant improvement of the physical accuracy of the simulation is achieved by adding a self-consistent solution of the carrier energy balance equation to the classical driftdiffusion set of equations. A description of the implementation of the hydrodynamic model is given along with two application examples — a submicron MOSFET and a BJT.

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تاریخ انتشار 2007